comset semiconductors 1/3 lf large signal power amplification high current switching suitable for : series and shunt regulators high fidelity amplifiers power-switching circuits pnp silicon transistor epitaxial base BDX18 ? BDX18n absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage BDX18 BDX18n -60 v -70 v cer collector-emitter voltage r be =100 ? BDX18 BDX18n -65 v v ebo collector-emitter voltage BDX18 BDX18n -7 v -100 v cbo emitter-base voltage BDX18 BDX18n -70 v -90 v cex collector-emitter voltage v be =+1.5 v BDX18 BDX18n -70 v i c collector current BDX18 BDX18n -15 a i b base current BDX18 BDX18n -7 a p t power dissipation @ t c = 25 BDX18 BDX18n 117 watts t j junction temperature t s storage temperature BDX18 BDX18n -65 to +200 c
comset semiconductors 2/3 BDX18 ? BDX18n thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 1.5 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit v ceo(sus) collector-emitter breakdown voltage (*) i c =200 ma, i b =0 BDX18 BDX18n -60 -60 -- v BDX18 -90 - - v cex(sus) collector-emitter breakdown voltage (*) i c =-100 ma, v be =1.5 v BDX18n -70 - - v BDX18 -70 - - v cer(sus) collector-emitter breakdown voltage (*) i c =-200 ma, r be =100 ? BDX18n -65 - - v v ce =-90 v, v be =1.5 v ---5 v ce =-60 v, v be =1.5 v t case =150c BDX18 -10 v ce =-70 v, v be =1.5 v ---5 i cex collector-emitter cutoff current v ce =-60 v, v be =1.5 v t case =150c BDX18n ---10 ma i ebo emitter-base cutoff current v eb =-7 v BDX18 BDX18n ---5ma v be base-emitter voltage (*) i c =-4.0 a, v ce =-4.0v BDX18 BDX18n ---1.8v v ce(sat) collector-emitter saturation voltage i c =-4.0 a, i b =-0.4v BDX18 BDX18n ---1.1v f t transition frequency i c =-1a, v ce =-10 v, f=1 mhz BDX18 BDX18n - 4-mhz
comset semiconductors 3/3 BDX18 ? BDX18n symbol ratings test condition(s) min typ mx unit h 21e static forward current transfer ratio (*) v ce =-4.0 v, i c =-4.0 a BDX18 BDX18n 20 -70 - (*) pulse width 300 s, duty cycle 2.0% (1) collector-emitter voltage limited et v ceci = v rated by an auxiliary circuit mechanical data case to-3 dimensions mm inches a 25,51 1,004 b 38,93 1,53 c 30,12 1,18 d 17,25 0,68 e 10,89 0,43 g 11,62 0,46 h 8,54 0,34 l 1,55 0,6 m 19,47 0,77 n 1 0,04 p 4,06 0,16 pin 1 : base pin 2 : collector case : emitter
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